Methods of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials

ABSTRACT

Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10 −7  amps/cm 2  at from −1.1V to +1.1V.

TECHNICAL FIELD

Embodiments disclosed herein pertain to capacitors having dielectricregions that include multiple metal oxide-comprising materials, and tomethods of forming such capacitors.

BACKGROUND

Capacitors are commonly-used electrical components in semiconductorintegrated circuitry, for example memory circuitry such as DRAMcircuitry. A typical capacitor is comprised of two conductive electrodesseparated by a non-conducting capacitor dielectric region. As integratedcircuit density increases, there is a continuing challenge to maintainsufficiently high storage capacitance despite decreasing capacitor area.One way of increasing cell capacitance is through cell structuretechniques. Such techniques include three-dimensional cell capacitors,such as trenched and stack capacitors. Other ways of increasing cellcapacitance include the development and utilization of new materials forone or both of the electrodes and the capacitor dielectric region.

One type of capacitor utilizes a metal-insulator-metal (MIM)construction. Such can provide capacitance increase in comparison towhere at least one of the capacitor electrodes is conductively dopedsemiconductor material. However, such capacitance increase alsoundesirably significantly increases leakage current across thecapacitor. Further, deposition of oxide-containing capacitor dielectricmaterials to form a part of a capacitor dielectric region can beproblematic in the fabrication of metal-containing capacitor electrodes.

Accordingly, needs remain for improved capacitor constructions andmethods of forming capacitors.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 2 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 3 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 4 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 5 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 6 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 7 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 8 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 9 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 10 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 11 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

FIG. 12 is a diagrammatic cross sectional view of a capacitorconstruction in accordance with an embodiment of the invention.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

A first embodiment capacitor 10 in accordance with the invention isdescribed with reference to FIG. 1. Such is diagrammatically shown, andwould be received over or as part of a substrate, for example asemiconductor substrate. In the context of this document, the term“semiconductor substrate” or “semiconductive substrate” is defined tomean any construction comprising semiconductive material, including, butnot limited to, bulk semiconductive materials such as a semiconductivewafer (either alone or in assemblies comprising other materialsthereon), and semiconductive material layers (either alone or inassemblies comprising other materials). The term “substrate” refers toany supporting structure, including, but not limited to, thesemiconductive substrates described above.

Capacitor 10 includes an inner conductive metal capacitor electrode 12,an outer conductive metal capacitor electrode 14, and a capacitordielectric region 16 received there-between. In the context of thisdocument, “metal” requires the capacitor electrode to comprise, consistessentially of, or consist of one or more conductive elemental metals,one or more conductive metal alloys, and/or one or more conductive metalcompounds. Specific examples include one or more of TiN, Pt, and Ru.Further in the context of this document, “inner” and “outer” arerelative to thickness of the substrate over or upon which the capacitor(or the capacitor in fabrication) is received in a directionorthogonal/vertical to a major/horizontal surface of such substrate.Accordingly, the inner conductive metal capacitor electrode is receivedelevationally deeper within the substrate thickness than is the outerconductive metal capacitor electrode. Accordingly, inner conductivemetal capacitor electrode 12 would be received over or as part ofunderlying/more-inner substrate material (not shown). Conductive metalcapacitor electrodes 12 and 14 may be of the same or differentcomposition, construction, size, and/or shape relative one another, andwhether existing or yet-to-be developed. An example elevationalthickness range for inner conductive metal capacitor electrode 12 isfrom about 70 Angstroms to about 250 Angstroms, while that for outerconductive metal capacitor electrode 14 is from about 50 Angstroms toabout 100 Angstroms.

Capacitor dielectric region 16 has a thickness no greater than 150Angstroms. Further thickness limitations for different materialsincluded as part of capacitor dielectric region 16 are provided herein,and are in addition to a maximum stated thickness for capacitordielectric region 16. In one embodiment, the capacitor dielectric region16 has a thickness no greater than 100 Angstroms, and in one embodimenthas a thickness no greater than 75 Angstroms.

Capacitor dielectric region 16 includes a first Al₂O₃-comprisingmaterial 18 outward of inner electrode 12. Material 18 may comprise,consist essentially of, or consist of Al₂O₃, and has a thickness of from2 Angstroms to 10 Angstroms. In one embodiment, material 18 has athickness of from 2 Angstroms to 4 Angstroms. A ZrO₂-comprising material20 is received outward of first Al₂O₃-comprising material 20. Material20 may comprise, consist essentially of, or consist of ZrO₂, and has athickness of from 30 Angstroms to 70 Angstroms. In one embodiment,material 20 has a thickness from 40 Angstroms to 60 Angstroms.

A second Al₂O₃-comprising material 22 is received outward ofZrO₂-comprising material 20. Material 22 may be of the same or differentcomposition from that of material 18, and may comprise, consistessentially of, or consist of Al₂O₃. Second Al₂O₃-comprising material 22has a thickness of from 2 Angstroms to 16 Angstroms. In one embodiment,material 22 has a thickness of from 4 Angstroms to 7 Angstroms. ATiO₂-comprising material 24 is received outward of secondAl₂O₃-comprising material 22. TiO₂-comprising material 24 may comprise,consist essentially of, or consist of TiO₂, and has a thickness of from40 Angstroms to 80 Angstroms. A sum “T” of the thicknesses of firstAl₂O₃-comprising material 18, ZrO₂-comprising material 20, and secondAl₂O₃-comprising material 22 is no greater than 70 Angstroms.

A combination of the above stated materials for dielectric region 16 inthe stated order in combination with the stated thickness values for therespective largest stated ranges produces the unexpected result ofcapacitor dielectric region 16 having in combination a dielectricconstant k of at least 35 and leakage current no greater than 1×10⁻⁷amps/cm² at from −1.1V to +1.1V. In one embodiment, the capacitordielectric region 16 has a dielectric constant k of at least 40. In oneembodiment, capacitor dielectric region 16 has leakage current nogreater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V.

In the above embodiments for capacitor dielectric region 16, firstAl₂O₃-comprising material 18 may or may not be in direct physicaltouching contact with inner electrode 12. Likewise, TiO₂-comprisingmaterial 24 may or may not be in direct physical touching contact withouter electrode 14. Accordingly, dielectric material other than Al₂O₃may or may not be received between material 18 and inner capacitorelectrode 12, and dielectric material other than TiO₂ may or may not bereceived between material 24 and outer capacitor electrode 14. Furtherin one embodiment and as shown, each of materials 18, 20, 22 and 24 isin direct physical touching contact with the immediately adjacent ofsuch materials. However, dielectric material of different compositionfrom that of the respective immediately adjacent of materials 18, 20, 22and 24 may be received between any one or more of such immediatelyadjacent materials.

For example, a capacitor 10 a is shown in FIG. 2. Like numerals fromFIG. 1 have been utilized where appropriate, with some constructiondifferences being indicated with the suffix “a” or with differentnumerals. In FIG. 2, an Al_(x)Zr_(y)O_(z)-comprising material 26 isreceived between first Al₂O₃-comprising material 18 and ZrO₂-comprisingmaterial 20, and where material 18 and material 20 are in directphysical touching contact with Al_(x)Zr_(y)O_(z)-comprising material 26.Where “x” is from 0.3 to 0.7, “y” is from 2.8 to 3.1 and “z” is from 6.0to 7.4. Where “x” is from 0.1 to 0.3, “y” is from 3.0 to 3.4 and “z” isfrom 6.1 to 7.4. Where “x” is from 2.8 to 3.2, “y” is from 0.6 to 0.9and “z” is from 5.3 to 6.7. Other quantities for “x”, “y”, and “z”falling within the respective x:y:z ratios may be used.Al_(x)Zr_(y)O_(z)-comprising material 26 may comprise, consistessentially of, or consist of Al_(x)Zr_(y)O_(z). An example thicknessrange for Al_(x)Zr_(y)O_(z)-comprising material 26 is from 2 Angstromsto 32 Angstroms.

An Al_(x)Zr_(y)O_(z)-comprising material 28 is received betweenZrO₂-comprising material 20 and second Al₂O₃-comprising material 22, andwhere material 20 and material 22 are in direct physical touchingcontact with Al_(x)Zr_(y)O_(z)-comprising material 28. Ranges for “x”,“y”, and “z” are as stated above for material 26. Such may be of thesame or different composition as material 26.Al_(x)Zr_(y)O_(z)-comprising material 28 may comprise, consistessentially of, or consist of Al_(x)Zr_(y)O_(z). An example thicknessrange for Al_(x)Zr_(y)O_(z)-comprising material 28 is from 2 Angstromsto 32 Angstroms.

A Ti_(x)Al_(y)O_(z)-comprising material 30 is received between secondAl₂O₃-comprising material 22 and TiO₂-comprising material 24, and wherematerial 22 and material 24 are in direct physical touching contact withTi_(x)Al_(y)O_(z)-comprising material 30. In one embodiment, “x” is from0.3 to 0.7, “y” is from 3.0 to 3.5 and “z” is from 5.0 to 6.8. In oneembodiment, “x” is from 4 to 10, “y” is from 0.1 to 0.4 and “z” is from8 to 20. Other quantities for “x”, “y”, and “z” falling within suchx:y:z ratios may be used. Material 30 may comprise, consist essentiallyof, or consist of Ti_(x)Al_(y)O_(z). An example thickness range forTi_(x)Al_(y)O_(z)-comprising material 30 is from 2 Angstroms to 66Angstroms.

Capacitor dielectric region 16 a has a thickness no greater than 150Angstroms. Further thickness limitations for different materialsincluded as part of capacitor dielectric region 16 a are providedherein, and are in addition to a maximum stated thickness for capacitordielectric region 16 a. In one embodiment, capacitor dielectric region16 a has a thickness no greater than 100 Angstroms, and in oneembodiment has a thickness no greater than 75 Angstroms.

Materials other than the above-described materials 26, 28, 30 might bereceived intermediate immediately adjacent of materials 18, 20, 22 and24. Regardless, provision of one or more of the above stated materials26, 28 and 30 is expected to provide one or both of a further increasein dielectric constant k and a further reduction in leakage current forcapacitor dielectric region 16 a as compared to capacitor dielectricregion 16.

Another embodiment capacitor 10 b is described with reference to FIG. 3.Like numerals from the above-described embodiments have been utilizedwhere appropriate, with some construction differences being indicatedwith the suffix “b” or with different numerals. In FIG. 3, capacitordielectric region 16 b includes first Al₂O₃-comprising material 18outward of inner electrode 12, and has a thickness of from 2 Angstromsto 10 Angstroms. TiO₂-comprising material 24 is received outward offirst Al₂O₃-comprising material 18, and has a thickness of from 40Angstroms to 80 Angstroms. A second Al₂O₃-comprising material 32 isreceived outward of TiO₂-comprising material 24. Such may comprise,consist essentially of, or consist of Al₂O₃ and may or may not be of thesame composition as first Al₂O₃ comprising material 18. Regardless,second Al₂O₃-comprising material 32 has a thickness of from 2 Angstromsto 10 Angstroms, and may or may not be in direct physical touchingcontact with outer capacitor electrode 14. In one embodiment, material32 has a thickness of from 4 Angstroms to 7 Angstroms.

Capacitor dielectric region 16 b has a thickness no greater than 150Angstroms. Further thickness limitations for different materialsincluded as part of capacitor dielectric region 16 b are providedherein, and are in addition to a maximum stated thickness for capacitordielectric region 16 b. In one embodiment, capacitor dielectric region16 b has a thickness no greater than 100 Angstroms, and in oneembodiment has a thickness no greater than 75 Angstroms.

A combination of the above stated materials for dielectric region 16 bin the stated order in combination with the stated thickness values forthe respective largest stated ranges produces the unexpected result ofcapacitor dielectric region 16 b having in combination a dielectricconstant k of at least 35 and leakage current no greater than 1×10⁻⁷amps/cm² at from −1.1V to +1.1V. In one embodiment, the capacitordielectric region 16 b has a dielectric constant k of at least 40. Inone embodiment, capacitor dielectric region 16 b has leakage current nogreater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V.

As in the above-described embodiments, immediately adjacent of materials18, 24 and 32 may be in direct physical touching contact with oneanother, or have intervening dielectric material received there-between.For example and by way of example only, material 30 (not shown in FIG.3) could be received between one or both of material pairs 32/24 or24/18.

Another capacitor 10 c is shown in FIG. 4. Like numerals from theabove-described embodiments have been utilized where appropriate, withsome construction differences being indicated with the suffix “c” orwith different numerals. Capacitor dielectric region 16 c has athickness no greater than 150 Angstroms. Further thickness limitationsfor different materials included as part of capacitor dielectric region16 c are provided herein, and are in addition to a maximum statedthickness for capacitor dielectric region 16 c. In one embodiment,capacitor dielectric region 16 c has a thickness no greater than 100Angstroms, and in one embodiment has a thickness no greater than 75Angstroms.

The capacitor of FIG. 4 is similar to that of FIG. 3, and comprisesspecific additional material within capacitor dielectric region 16 creceived outwardly of second Al₂O₃-comprising material 32. Specifically,ZrO₂-comprising material 20 is received outward of secondAl₂O₃-comprising material 32, and has a thickness of from 30 Angstromsto 70 Angstroms. A third Al₂O₃-comprising material 34 is receivedoutward of ZrO₂-comprising material 20, and has a thickness of from 2Angstroms to 10 Angstroms. Third Al₂O₃-comprising material 34 maycomprise, consist essentially of, or consist of Al₂O₃, and may be of thesame or of different composition from that of either of materials 18 or32. Material 34 may or may not be in direct physical touching contactwith outer capacitor electrode 14. Further, third Al₂O₃-comprisingmaterial 34 may or may not be in direct physical touching contact withZrO₂-comprising material 20, and ZrO₂-comprising material 20 may or maynot be in direct physical touching contact with second Al₂O₃-comprisingmaterial 32. In one embodiment, Al_(x)Zr_(y)O_(z) material 26 (not shownin FIG. 4) may be received between either of material pairs 32/20 and34/20. Regardless, providing of materials 20 and 34 as shown anddescribed is expected to provide one or both of a further increase indielectric constant k and a further reduction in leakage current forcapacitor dielectric region 16 c as compared to capacitor dielectricregion 16 b.

Another embodiment capacitor 10 d is shown in FIG. 5. Like numerals fromthe above-described embodiments have been utilized where appropriate,with some construction differences being indicated with the suffix “d”or with different numerals. Capacitor dielectric region 16 d has athickness no greater than 150 Angstroms. Further thickness limitationsfor different materials included as part of capacitor dielectric region16 d are provided herein, and are in addition to a maximum statedthickness for capacitor dielectric region 16 d. In one embodiment,capacitor dielectric region 16 d has a thickness no greater than 100Angstroms, and in one embodiment has a thickness no greater than 75Angstroms.

Capacitor dielectric region 16 d includes optional firstAl₂O₃-comprising material 18 outward of inner capacitor electrode 12,and has a thickness of from 0 Angstroms to 10 Angstroms. Accordingly,optional first Al₂O₃-comprising material 18 may be present in thecapacitor construction 10 d (as shown), or may not be present in thecapacitor construction.

ZrO₂-comprising material 20 is received outward of inner capacitorelectrode 12 and outward of optional first Al₂O₃-comprising material 18if optional first Al₂O₃-comprising material 18 is present.ZrO₂-comprising material 20 has a thickness of from 30 Angstroms to 70Angstroms. Second Al₂O₃-comprising material 22 is received outward ofZrO₂-comprising material 20, and has a thickness of from 2 Angstroms to16 Angstroms. TiO₂-comprising material 24 is received outward of secondAl₂O₃-comprising material 22, and has a thickness of from 40 Angstromsto 80 Angstroms. Third Al₂O₃-comprising material 32 is received outwardof TiO₂-comprising material 24, and has a thickness of from 2 Angstromsto 10 Angstroms. A sum T of the thicknesses of optional firstAl₂O₃-comprising material 18 if such is present, ZrO₂-comprisingmaterial 20, and second Al₂O₃-comprising material 22 totals no more than70 Angstroms.

A combination of the above stated materials for dielectric region 16 din the stated order in combination with the stated thickness values forthe respective largest stated ranges produces the unexpected result ofcapacitor dielectric region 16 d having in combination a dielectricconstant k of at least 35 and leakage current no greater than 1×10⁻⁷amps/cm² at from −1.1V to +1.1V. In one embodiment, the capacitordielectric region 16 d has a dielectric constant k of at least 40. Inone embodiment, capacitor dielectric region 16 d has leakage current nogreater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V.

Materials 18, 20, 22, 24 and 32 are shown as being in direct physicaltouching contact relative to immediately adjacent of such materials.However, any dielectric material may be received between any pair ofimmediately adjacent such materials. For example, in some embodimentsAl_(x)Zr_(y)O_(z) material 26 (not shown in FIG. 5) may be receivedbetween one or both of material pairs 20/18 and 22/20. Further in someembodiments, Ti_(x)Al_(y)O_(z) material 30 (not shown in FIG. 5) may bereceived between one or both of material pairs 24/22 and 32/24.

Another capacitor construction 10 e is shown in FIG. 6. Like numeralsfrom the above-described embodiments have been utilized whereappropriate, with some construction differences being indicated with thesuffix “e” or with different numerals. Capacitor dielectric region 16 ehas a thickness no greater than 150 Angstroms. Further thicknesslimitations for different materials included as part of capacitordielectric region 16 e are provided herein, and are in addition to amaximum stated thickness for capacitor dielectric region 16 e. In oneembodiment, capacitor dielectric region 16 e has a thickness no greaterthan 100 Angstroms, and in one embodiment has a thickness no greaterthan 75 Angstroms.

Capacitor dielectric region 16 e includes first Al₂O₃-comprisingmaterial 18 outward of inner capacitor electrode 12, and has a thicknessof from 2 Angstroms to 10 Angstroms. ZrO₂-comprising material 22 isreceived outward of first Al₂O₃-comprising material 18, and has athickness of from 30 Angstroms to 70 Angstroms. TiO₂-comprising material24 is received outward of ZrO₂-comprising material 22, and has athickness of from 40 Angstroms to 80 Angstroms. Second Al₂O₃-comprisingmaterial 34 is received outward of TiO₂-comprising material 24, and hasa thickness of from 2 Angstroms to 10 Angstroms.

A combination of the above stated materials for dielectric region 16 ein the stated order in combination with the stated thickness values forthe respective largest stated ranges produces the unexpected result ofcapacitor dielectric region 16 e having in combination a dielectricconstant k of at least 35 and leakage current no greater than 1×10⁻⁷amps/cm² at from -1.1V to +1.1V. In one embodiment, the capacitordielectric region 16 e has a dielectric constant k of at least 40. Inone embodiment, capacitor dielectric region 16 e has leakage current nogreater than 5×10⁻⁸ amps/cm² at from -1.1V to +1.1V.

Materials 18, 22, 24 and 34 are shown as being in direct physicaltouching contact relative to immediately adjacent of such materials.However, any dielectric material may be received between any pair ofimmediately adjacent such materials. For example, in some embodimentsAl_(x)Zr_(y)O_(z) material 26 (not shown in FIG. 6) may be receivedbetween material pair 22/18. In some embodiments, Ti_(x)Al_(y)O_(z)material 30 (not shown in FIG. 6) may be received between material pair34/24. Further in some embodiments, a Ti_(x)Zr_(y)O_(z)-comprisingmaterial (not shown in FIG. 6) may be received between material pair24/22. Relative ratio quantities for “x”, “y”, and “z” inTi_(x)Al_(y)O_(z) are as follows. Where “x” is from 0.6 to 0.8, “y” isfrom 2.5 to 3.6 and “z” is from 6.1 to 8.9. Where “x” is from 0.1 to0.3, “y” is from 3.0 to 3.4 and “z” is from 6.1 to 7.5. Where “x” isfrom 3.5 to 4.0, “y” is from 0.1 to 0.3 and “z” is from 7.1 to 8.7.Where “x” is from 1.0 to 2.0, “y” is from 0.2 to 0.5 and “z” is from 2.3to 5.1. Other quantities for “x”, “y”, and “z” falling within therespective x:y:z ratios may be used. The Ti_(x)Zr_(y)O_(z)-comprisingmaterial may comprise, consist essentially of, or consist ofTi_(x)Zr_(y)O_(z). An example thickness range for aTi_(x)Zr_(y)O_(z)-comprising material is from 2 Angstroms to 76Angstroms.

Another capacitor construction 10 f is shown in FIG. 7. Like numeralsfrom the above-described embodiments have been utilized whereappropriate, with some construction differences being indicated with thesuffix “f” or with different numerals. Capacitor dielectric region 16 fhas a thickness no greater than 150 Angstroms. Further thicknesslimitations for different materials included as part of capacitordielectric region 16 f are provided herein, and are in addition to amaximum stated thickness for capacitor dielectric region 16 f. In oneembodiment, capacitor dielectric region 16 f has a thickness no greaterthan 100 Angstroms, and in one embodiment has a thickness no greaterthan 75 Angstroms.

Capacitor dielectric region 16 f includes an HfO₂-comprising material 38outward of inner capacitor electrode 12, and has a thickness of from 10Angstroms to 50 Angstroms. Material 38 may or may not be in directphysical touching contact with inner capacitor electrode 12.TiO₂-comprising material 24 is received outward of HfO₂-comprisingmaterial 38, and has a thickness of from 40 Angstroms to 80 Angstroms.Al₂O₃-comprising material 32 is received outward of TiO₂-comprisingmaterial 24, and has a thickness of from 2 Angstroms to 10 Angstroms.

A combination of the above stated materials for dielectric region 16 fin the stated order in combination with the stated thickness valuesproduces the unexpected result of capacitor dielectric region 16 fhaving in combination a dielectric constant k of at least 35 and leakagecurrent no greater than 1×10⁻⁷ amps/cm² at from −1.1V to +1.1V. In oneembodiment, the capacitor dielectric region 16 f has a dielectricconstant k of at least 40. In one embodiment, capacitor dielectricregion 16 f has leakage current no greater than 5×10⁻⁸ amps/cm² at from−1.1V to +1.1V.

Materials 38, 24, and 32 may be in direct physical touching contactrelative to immediately adjacent of such materials, or interveningdielectric material may be received between one or both of materialpairs 38/24 and 32/24. For example, another capacitor construction 10 gis shown in FIG. 8. Like numerals from the above-described embodimentshave been utilized where appropriate, with some construction differencesbeing indicated with the suffix “g” or with different numerals.Capacitor dielectric region 16 g has a thickness no greater than 150Angstroms. Further thickness limitations for different materialsincluded as part of capacitor dielectric region 16 g are providedherein, and are in addition to a maximum stated thickness for capacitordielectric region 16 g. In one embodiment, capacitor dielectric region16 g has a thickness no greater than 100 Angstroms, and in oneembodiment has a thickness no greater than 75 Angstroms.

In capacitor dielectric region 16 g, TiO₂-comprising material 24 is notin direct physical touching contact with HfO₂-comprising material 38,rather having a material 40 received there-between. In one embodiment,such comprises a Ti_(x)Hf_(y)O_(z)-comprising material, whereTiO₂-comprising material 24 and HfO₂-comprising material 38 are indirect physical touching contact with Ti_(x)Hf_(y)O_(z)-comprisingmaterial 40. Where “x” is from 0.6 to 0.9, “y” is from 2.8 to 3.5 and“z” is from 6.7 to 8.9. Where “x” is from 1.0 to 2.0, “y” is from 0.2 to0.5 and “z” is from 2.3 to 5.1. Other quantities for “x”, “y”, and “z”falling within such x:y:z ratio may be used. Material 40 may comprise,consist essentially of, or consist of Ti_(x)Hf_(y)O_(z). An examplethickness range for Ti_(x)Hf_(y)O_(z)-comprising material 40 is from 2Angstroms to 94 Angstroms. Ti_(x)Al_(y)O_(z) material 30 is receivedbetween Al₂O₃-comprising material 32 and TiO₂-comprising material 24.Regardless, provision of one or more of the above stated materials 40 or30 is expected to provide one or both of a further increase indielectric constant k and a further reduction in leakage current forcapacitor dielectric region 16 g as compared to capacitor dielectricregion 16 f.

Another capacitor construction 10 h is shown in FIG. 9. Like numeralsfrom the above-described embodiments have been utilized whereappropriate, with some construction differences being indicated with thesuffix “h” or with different numerals. Capacitor dielectric region 16 hhas a thickness no greater than 150 Angstroms. Further thicknesslimitations for different materials included as part of capacitordielectric region 16 h are provided herein, and are in addition to amaximum stated thickness for capacitor dielectric region 16 h. In oneembodiment, capacitor dielectric region 16 h has a thickness no greaterthan 100 Angstroms, and in one embodiment has a thickness no greaterthan 75 Angstroms.

Capacitor dielectric region 16 h includes a Ti_(x)M_(y)O_(z)-comprisingmaterial 44 outward of inner capacitor electrode 12, and has a thicknessof from 5 Angstroms to 100 Angstroms. “M” is at least one of Zr, Hf, Ta,Si, Nb, or Al. Where “x” is from 0.6 to 0.9, “y” is from 2.8 to 3.5 and“z” is from 5.3 to 10.7. Other quantities for “x”, “y”, and “z” fallingwithin such x:y:z ratio may be used. In one embodiment,Ti_(x)M_(y)O_(z)-comprising material 44 has a thickness of from 30Angstroms to 75 Angstroms. Ti_(x)M_(y)O_(z)-comprising material 44 mayor may not be in direct physical touching contact with inner electrode12. A TiO₂-comprising material 45 is received outward ofTi_(x)M_(y)O_(z)-comprising material 44. TiO₂-comprising material 45 maycomprise, consist essentially of, or consist of TiO₂, and has athickness of from 5 Angstroms to 100 Angstroms.

A combination of the above stated materials for dielectric region 16 hin the stated order in combination with the stated thickness valuesproduces the unexpected result of capacitor dielectric region 16 hhaving in combination a dielectric constant k of at least 35 and leakagecurrent no greater than 1×10⁻⁷ amps/cm² at from −1.1V to +1.1V. In oneembodiment, capacitor dielectric region 16 h has a dielectric constant kof at least 40. In one embodiment, capacitor dielectric region 16 h hasleakage current no greater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V.

Materials 45 and 44 may be in direct physical touching contact with eachother, or intervening dielectric material may be received betweenmaterials 45 and 44.

Another capacitor construction 10 i is shown in FIG. 10. Like numeralsfrom the above-described embodiments have been utilized whereappropriate, with some construction differences being indicated with thesuffix “i” or with different numerals. Capacitor dielectric region 16 ihas a thickness no greater than 150 Angstroms. Further thicknesslimitations for different materials included as part of capacitordielectric region 16 i are provided herein, and are in addition to amaximum stated thickness for capacitor dielectric region 16 i. In oneembodiment, capacitor dielectric region 16 i has a thickness no greaterthan 100 Angstroms, and in one embodiment has a thickness no greaterthan 75 Angstroms.

Capacitor dielectric region 16 i includes first Al₂O₃-comprisingmaterial 18 outward of inner capacitor electrode 12, and has a thicknessof from 2 Angstroms to 10 Angstroms. ZrO₂-comprising material 20 isreceived outward of first Al₂O₃-comprising material 18, and has athickness of from 30 Angstroms to 70 Angstroms. Second Al₂O₃-comprisingmaterial 22 is received outward of ZrO₂-comprising material 20, and hasa thickness of from 2 Angstroms to 16 Angstroms.

Ti_(x)M_(y)O_(z)-comprising material 44 is received outward of secondAl₂O₃-comprising material 22, and has a thickness of from 5 Angstroms to100 Angstroms. Material 44 may or may not be in direct physical touchingcontact with outer electrode 14. A sum T of the thicknesses of firstAl₂O₃-comprising material 18, ZrO₂-comprising material 20, and secondAl₂O₃-comprising material 22 totals no more than 70 Angstroms.

A combination of the above stated materials for dielectric region 16 iin the stated order in combination with the stated thickness valuesproduces the unexpected result of capacitor dielectric region 16 ihaving in combination a dielectric constant k of at least 35 and leakagecurrent no greater than 1×10⁻⁷ amps/cm² at from −1.1V to +1.1V. In oneembodiment, capacitor dielectric region 16 i has a dielectric constant kof at least 40. In one embodiment, capacitor dielectric region 16 i hasleakage current no greater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V.

Immediately adjacent of materials 18, 20, 22 and 44 may be in directphysical touching contact with one another, or have interveningdielectric material received there-between. For example, material 26/30(not shown in FIG. 10) could be received between one or both of materialpairs 18/20 and 20/22. Regardless, material different from that ofmaterials 22 and 44 could be received between materials 22 and 44.

Another capacitor construction 10 j is shown in FIG. 11. Like numeralsfrom the above-described embodiments have been utilized whereappropriate, with some construction differences being indicated with thesuffix “j” or with different numerals. Capacitor dielectric region 16 jhas a thickness no greater than 150 Angstroms. Further thicknesslimitations for different materials included as part of capacitordielectric region 16 j are provided herein, and are in addition to amaximum stated thickness for capacitor dielectric region 16 j. In oneembodiment, capacitor dielectric region 16 j has a thickness no greaterthan 100 Angstroms, and in one embodiment has a thickness no greaterthan 75 Angstroms.

Capacitor dielectric region 16 j includes optional firstAl₂O₃-comprising material 18 outward of inner capacitor electrode 12,and has a thickness from 0 Angstroms to 10 Angstroms. Accordingly,capacitor construction 10 j may or may not include firstAl₂O₃-comprising material 18. A first material 46 is received outward ofinner capacitor electrode 12 and outward of optional firstAl₂O₃-comprising material 18 if such is present. First material 46 has athickness of from 20 Angstroms to 50 Angstroms. First material 46comprises at least one of ZrO₂ and HfO₂, including any combination ormixture thereof. First material 46 may comprise, consist essentially of,or consist of one or more of ZrO₂ and HfO₂.

An optional second Al₂O₃-comprising material 22 is received outward offirst material 46, and has a thickness of from 0 Angstroms to 16Angstroms. Accordingly, optional second Al₂O₃-comprising material 22 mayor may not be present in capacitor dielectric region 16 j, andindependent of whether optional first Al₂O₃-comprising material 18 ispresent. TiO₂-comprising material 24 is received outward of firstmaterial 46 and outward of optional second Al₂O₃-comprising material 22if such is present. TiO₂-comprising material 24 has a thickness of from40 Angstroms to 80 Angstroms.

A second material 48 is received outward of TiO₂-comprising material 24,and comprises at least one of ZrO₂ or HfO₂, including any combination ormixture thereof. Such may comprise, consist essentially of, or consistof one or more of ZrO₂ and HfO₂, and may or may not be of the samecomposition as first material 46. Second material 48 has a thickness offrom 10 Angstroms to 40 Angstroms, with a sum of the thicknesses offirst material 46 and second material 48 alone totaling no more than 70Angstroms.

Optional third Al₂O₃-comprising material 32 is received outward ofsecond material 48, and has a thickness of from 0 Angstroms to 10Angstroms. Accordingly, optional third Al₂O₃-comprising material 32 mayor may not be present in capacitor dielectric region 16 j, andindependent of presence of one or both of optional firstAl₂O₃-comprising material 18 and optional second Al₂O₃-comprisingmaterial 22. Accordingly, zero, one, two, or three of Al₂O₃-comprisingmaterials 18, 22 and 32 may or may not be present in capacitordielectric region 16 j.

A combination of the above stated materials for dielectric region 16 jin the stated order in combination with the stated thickness valuesproduces the unexpected result of capacitor dielectric region 16 jhaving in combination a dielectric constant k of at least 35 and leakagecurrent no greater than 1×10⁻⁷ amps/cm² at from −1.1V to +1.1V. In oneembodiment, capacitor dielectric region 16 j has a dielectric constant kof at least 40. In one embodiment, capacitor dielectric region 16 j hasleakage current no greater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V.

Materials 18, 46, 22, 24, 48, and 32 are shown as being in directphysical touching contact relative to immediately adjacent of suchmaterials. However, any dielectric material may be received between anypair of immediately adjacent such materials. For example, in someembodiments Al_(x)Zr_(y)O_(z) material 26/28 (not shown in FIG. 11) maybe received between any of material pairs 46/18, 46/22, and 48/32 wherefor example materials 46 and/or 48 comprise ZrO₂. In some embodiments,Al_(x)Hf_(y)O_(z) material (not shown in FIG. 11) may be receivedbetween any of material pairs 46/18, 46/22, and 48/32 where for examplematerials 46 and/or 48 comprise HfO₂. In some embodiments,Ti_(x)Hf_(y)O_(z) material 30 (not shown in FIG. 11) may be receivedbetween material pair 24/22. In some embodiments where second material48 comprises HfO₂, a Ti_(x)Hf_(y)O_(z)-comprising material 40 (not shownin FIG. 11) may be received between material pair 48/24.

Another capacitor construction 10 k is shown in FIG. 12. Like numeralsfrom the above-described embodiments have been utilized whereappropriate, with some construction differences being indicated with thesuffix “k” or with different numerals. Capacitor dielectric region 16 khas a thickness no greater than 150 Angstroms. Further thicknesslimitations for different materials included as part of capacitordielectric region 16 k are provided herein, and are in addition to amaximum stated thickness for capacitor dielectric region 16 k. In oneembodiment, capacitor dielectric region 16 k has a thickness no greaterthan 100 Angstroms, and in one embodiment has a thickness no greaterthan 75 Angstroms.

Capacitor dielectric region 16 k includes optional firstAl₂O₃-comprising material 18 outward of inner capacitor electrode 12,and has a thickness from 0 Angstroms to 2 Angstroms. Accordingly,capacitor construction 10 k may or may not include firstAl₂O₃-comprising material 18. Al_(x)Zr_(y)O_(z)-comprising material 26is received outward of inner capacitor electrode 12 and outward ofoptional first Al₂O₃-comprising material 18 if such is present.Al_(x)Zr_(y)O_(z)-comprising material 26 has a thickness of from 2Angstroms to 30 Angstroms.

Optional second Al₂O₃-comprising material 22 is received outward ofAl_(x)Zr_(y)O_(z)-comprising material 26, and has a thickness of from 0Angstroms to 10 Angstroms. Accordingly, optional second Al₂O₃-comprisingmaterial 22 may or may not be present in capacitor dielectric region 16k, and independent of whether optional first Al₂O₃-comprising material18 is present.

A first material 52 is received outward of Al_(x)Zr_(y)O_(z)-comprisingmaterial 26 and outward of optional second Al₂O₃-comprising material 22if optional second Al₂O₃-comprising material 22 is present. Firstmaterial 52 comprises at least one of ZrO₂ or Ti_(x)Zr_(y)O_(z), orZr_(a)Ti_(x)Al_(y)O_(z), including any combinations or mixtures thereof.Relative ratio quantities for “x”, “y”, and “z” in Ti_(x)Zr_(y)O_(z) areas follows. Where “x” is from 0.6 to 0.8, “y” is from 2.5 to 3.6 and “z”is from 6.1 to 8.9. Where “x” is from 0.1 to 0.3, “y” is from 3.0 to 3.4and “z” is from 6.1 to 7.4. Where “x” is from 3.5 to 4.0, “y” is from0.1 to 0.3 and “z” is from 7.1 to 8.7. Where “x” is from 1.0 to 2.0, “y”is from 0.2 to 0.5 and “z” is from 2.3 to5.1. Other quantities for “x”,“y”, and “z” falling within the respective x:y:z ratios may be used.Relative ratio quantities for “a”, “x”, “y”, and “z” inZr_(a)Ti_(x)Al_(y)O_(z) are as follows. Where “a” is from 0.1 to 0.5,“x” is from 0.2 to 2.0, “y” is from 0.01 to 0.1 and “z” is from 0.8 to5.2. Other quantities for “a”, “x”, “y”, and “z” falling within therespective a:x:y:z ratios may be used. First material 52 has a thicknessof from 30 Angstroms to 60 Angstroms. First material 52 may comprise,consist essentially of, or consist of one or more of ZrO₂ orTi_(x)Zr_(y)O_(z) or Zr_(a)Ti_(x)Al_(y)O_(z). During formation ofcapacitor dielectric region 16 k, first material 52 may or may not beannealed prior to deposition of any material thereover. If annealed, anexample annealing temperature range is from about 400° C. to about 650°C., and an example time range for such annealing is from about 10seconds to about 300 seconds. Plasma may or may not be used.

Optional third Al₂O₃-comprising material 32 is received outward of firstmaterial 52, and has a thickness of from 0 Angstroms to 4 Angstroms.Accordingly, optional third Al₂O₃-comprising material 32 may or may notbe present in capacitor dielectric region 16 k, and independent ofwhether optional first Al₂O₃-comprising material 18 or whether optionalsecond Al₂O₃-comprising material 22 are present.

A second material 54 is received outward of first material 52 comprisingat least one of ZrO₂ or Ti_(x)Zr_(y)O_(z) or Zr_(a)Ti_(x)Al_(y)O_(z),and outward of optional third Al₂O₃-comprising material 32 if optionalthird Al₂O₃-comprising material 32 is present. Second material 54comprises at least one of TiO₂ or Ti_(x)Zr_(y)O_(z) orZr_(a)Ti_(x)Al_(y)O_(z), including any combinations or mixtures thereof.Example materials for Ti_(x)Zr_(y)O_(z) and Zr_(a)Ti_(x)Al_(y)O_(z), arethose as described above for capacitor dielectric region 16 k. Secondmaterial 54 has a thickness of from 10 Angstroms to 70 Angstroms. Secondmaterial 54 may comprise, consist essentially of, or consist of one ormore of ZrO₂ or Ti_(x)Zr_(y)O_(z) or Zr_(a)Ti_(x)Al_(y)O_(z). Duringformation of capacitor dielectric region 16 k, second material 54 may ormay not be annealed prior to deposition of any material thereover. Ifannealed, example conditions include those described above for annealingfirst material 52.

An optional fourth Al₂O₃-comprising material 56 is received outward ofsecond material 54, and has a thickness of from 0 Angstroms to 4Angstroms. Accordingly, optional fourth Al₂O₃-comprising material 56 mayor may not be present in capacitor dielectric region 16 k, andindependent of whether optional first Al₂O₃-comprising material 18,whether optional second Al₂O₃-comprising material 22, or whetheroptional third Al₂O₃-comprising material 32 are present. Accordingly,zero, one, two, three, or four of Al₂O₃-comprising materials 18, 22, 32,and 56 may or may not be present in capacitor dielectric region 16 k.

A combination of the above stated materials for dielectric region 16 kin the stated order in combination with the stated thickness valuesproduces the unexpected result of capacitor dielectric region 16 khaving in combination a dielectric constant k of at least 35 and leakagecurrent no greater than 1×10⁻⁷ amps/cm² at from −1.1V to +1.1V. In oneembodiment, capacitor dielectric region 16 k has a dielectric constant kof at least 40. In one embodiment, capacitor dielectric region 16 k hasleakage current no greater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V.

Materials 18, 26, 22, 52, 32, 54, and 56 are shown as being in directphysical touching contact relative to immediately adjacent of suchmaterials. However, any dielectric material may be received between anypair of immediately adjacent such materials.

Embodiments of the invention also encompass various methods of formingcapacitors encompassing any existing or yet-to-be-developed depositionand anneal techniques. Such encompass depositing inner conductive metalcapacitor electrode material over a suitable substrate, for example asemiconductor substrate. Example materials include any of thosedescribed above with respect to inner conductive metal capacitorelectrode 12. A capacitor dielectric region is formed outward of theinner conductive metal capacitor electrode material to a thickness nogreater than 150 Angstroms, to have a dielectric constant k of at least35, and to have leakage current no greater than 1×10⁻⁷ amps/cm² at from−1.1V to +1.1V.

In one embodiment, the forming of the capacitor dielectric regionincludes depositing an amorphous ZrO₂-comprising material to a thicknessno greater than 35 Angstroms outward of the inner conductive metalcapacitor electrode material. The ZrO₂-comprising material formedoutward of the inner conductive metal capacitor electrode material mayor may not be in direct physical touching contact therewith. Theamorphous ZrO₂-comprising material is annealed after its deposition toform crystalline ZrO₂-comprising material having a thickness no greaterthan 35 Angstroms. Such annealing may or may not be conducted in aninert atmosphere, and may or may not be subatmospheric. An exampleannealing ambient is any of air, Ar, N₂, O₂, O₃, and any combination orsub-combinations thereof. An example annealing temperature range is fromabout 400° C. to about 650° C., and an example time range for suchannealing is from about 10 seconds to about 300 seconds. Plasma may ormay not be used.

After the annealing of the amorphous ZrO₂-comprising material, anAl₂O₃-comprising material is deposited outward of the crystallineZrO₂-comprising material, and to have a thickness of from 2 Angstroms to16 Angstroms. The Al₂O₃-comprising material formed over the crystallineZrO₂-comprising material may or may not be in direct physical touchingcontact therewith. In one embodiment, an Al_(x)Zr_(y)O_(z)-comprisingmaterial is provided between such Al₂O₃-comprising material and thecrystalline ZrO₂-comprising material, with the Al₂O₃-comprising materialand the ZrO₂-comprising material there-under being in direct physicaltouching contact with the Al_(x)Zr_(y)O_(z)-comprising material.

An amorphous TiO₂-comprising material is deposited to a thickness nogreater than 50 Angstroms outward of the Al₂O₃-comprising material. Theamorphous TiO₂-comprising material having thickness no greater than 50Angstroms may or may not be in direct physical touching contacttherewith. Regardless, such amorphous TiO₂-comprising material isannealed in the presence of oxygen after its deposition to formcrystalline TiO₂-comprising material. The oxygen may be provided in theform of O₂, O₃, and/or by compounds which include oxygen and otherelements. Example anneal conditions include those described above forthe anneal of the ZrO₂-comprising material.

After the annealing of the amorphous TiO₂-comprising material, an outerconductive metal capacitor electrode material is deposited outward ofthe crystalline TiO₂-comprising material. Example materials include anyof those described above with respect to capacitor electrodes 12 and 14.

A combination of the above stated processing steps for the capacitordielectric region in the stated order in combination with the statedthickness values produces the unexpected result of the capacitordielectric region having in combination a dielectric constant k of atleast 35 and leakage current no greater than 1×10⁻⁷ amps/cm² at from−1.1V to +1.1V. In one embodiment, the capacitor dielectric region has adielectric constant k of at least 40. In one embodiment, the capacitordielectric region has leakage current no greater than 5×10⁻⁸ amps/cm² atfrom −1.1V to +1.1V.

In one embodiment including the above described method, an interveningAl₂O₃-comprising material may be deposited outward of the innerconductive metal capacitor electrode material prior to the depositing ofthe amorphous ZrO₂-comprising material, and to a thickness of from 2Angstroms to 10 Angstroms, and in one embodiment to a thickness of from2 Angstroms to 4 Angstroms. In such event, a sum of the thicknesses ofthe intervening Al₂O₃-comprising material, the crystallineZrO₂-comprising material, and the Al₂O₃-comprising material depositedover the crystalline ZrO₂-comprising material totals no more than 70Angstroms.

The intervening Al₂O₃-comprising material may or may not be in directphysical touching contact with the crystalline ZrO₂-comprising material.In one embodiment, an Al_(x)Zr_(y)O_(z)-comprising material is providedbetween the intervening Al₂O₃-comprising material and the crystallineZrO₂-comprising material, with the intervening Al₂O₃-comprising materialand the ZrO₂-comprising material being in direct physical touchingcontact with the Al_(x)Zr_(y)O_(z)-comprising material. Any of the aboveAl_(x)Zr_(y)O_(z)-comprising materials are examples.

The crystalline TiO₂-comprising material may or may not be in directphysical touching contact with the Al₂O₃-comprising material formedthereover. In one embodiment, a Ti_(x)Al_(y)O_(z)-comprising material isprovided between such Al₂O₃-comprising material and the crystallineTiO₂-comprising material. In one embodiment, such Al₂O₃-comprisingmaterial and the crystalline TiO₂-comprising material are in directphysical touching contact with the Ti_(x)Al_(y)O_(z)-comprisingmaterial. Any of the Ti_(x)Al_(y)O_(z)-comprising materials describedabove are examples.

Another Al₂O₃-comprising material may be deposited outward of thecrystalline TiO₂-comprising material prior to the depositing of theouter conductive metal capacitor electrode material, and to have athickness of from 2 Angstroms to 10 Angstroms. Such may or may not beformed in direct physical touching contact with the crystallineTiO₂-comprising material. In one embodiment, aTi_(x)Al_(y)O_(z)-comprising material is provided between suchanother/outer Al₂O₃-comprising material and the crystallineTiO₂-comprising material. In one embodiment, such another/outerAl₂O₃-comprising material and the crystalline TiO₂-comprising materialare provided in direct physical touching contact with theTi_(x)Al_(y)O_(z)-comprising material.

In additional embodiments, processing may proceed as described in theabove methods through the depositing of the Al₂O₃-comprising materialoutward of the crystalline ZrO₂-comprising material, and to have athickness of from 2 Angstroms to 16 Angstroms. Then, an amorphousTiO₂-comprising material is deposited to a thickness greater than 50Angstroms outward of the Al₂O₃-comprising material having thickness offrom 2 Angstroms to 16 Angstroms. In such event, the outer conductivemetal capacitor electrode material is then deposited outward of theTiO₂-comprising material at a temperature which transforms the amorphousTiO₂-comprising material to be crystalline during such act of depositingthe outer conductive metal capacitor electrode material. For example,exposure to a temperature of at least 500° C. for at least 1 minuteoccurring during deposition of the outer conductive metal capacitorelectrode material will achieve such amorphous-to-crystalline phasetransformation of a TiO₂-comprising material having thickness greaterthan 50 Angstroms.

Alternately in such additional embodiments, the outer conductive metalcapacitor electrode material is deposited outward of the TiO₂-comprisingmaterial at a temperature which does not transform the TiO₂-comprisingmaterial to be crystalline during such act of depositing the outerconductive metal capacitor electrode material. After deposition of theouter conductive metal capacitor electrode material, the substrate isthen exposed to a temperature to transform the amorphous TiO₂-comprisingmaterial having thickness greater than 50 Angstroms to be crystalline.Example anneal conditions include exposure to a temperature of at least500° C. for at least 1 minute.

A combination of the above stated processing steps in such additionalembodiments for the capacitor dielectric region in the stated order incombination with the stated thickness values produces the unexpectedresult of the capacitor dielectric region having in combination adielectric constant k of at least 35 and leakage current no greater than1×10⁻⁷ amps/cm² at from −1.1V to +1.1V. In one embodiment, the capacitordielectric region has a dielectric constant k of at least 40. In oneembodiment, the capacitor dielectric region has leakage current nogreater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V. Further, one orboth of an intervening Al₂O₃-comprising material and outer/anotherAl₂O₃-comprising material might also be deposited in such additionalembodiments as described above.

In a further embodiment, the forming of the capacitor dielectric regionincludes depositing a first Al₂O₃-comprising material outward of theinner conductive metal capacitor electrode material, and to have athickness of from 2 Angstroms to 10 Angstroms. Such firstAl₂O₃-comprising material may or may not be in direct physical touchingcontact with the inner conductive metal capacitor electrode material.Example first Al₂O₃-comprising material includes any of those describedabove for materials 18, 22 and 32.

A TiO₂-comprising material is deposited outward of the firstAl₂O₃-comprising material, and to a thickness of from 40 Angstroms to 80Angstroms. Example materials include those described above for material20. Such may or may not be in direct physical touching contact with thefirst Al₂O₃-comprising material. In one embodiment, aTi_(x)Al_(y)O_(z)-comprising material is provided between the firstAl₂O₃-comprising material and the TiO₂-comprising material. In oneembodiment, the first Al₂O₃-comprising material and the TiO₂-comprisingmaterial are provided in direct physical touching contact with suchTi_(x)Al_(y)O_(z)-comprising material.

A second Al₂O₃-comprising material is deposited outward of theTiO₂-comprising material, and to have a thickness of from 2 Angstroms to10 Angstroms. Examples include any of those described above formaterials 18/22/32. The second Al₂O₃-comprising material may or may notbe in direct physical touching contact with the TiO₂-comprisingmaterial. In one embodiment, a Ti_(x)Al_(y)O_(z)-comprising material isprovided between the second Al₂O₃-comprising material and theTiO₂-comprising material. In one embodiment, the second Al₂O₃-comprisingmaterial and the TiO₂-comprising material are provided in directphysical touching contact with such Ti_(x)Al_(y)O_(z)-comprisingmaterial.

An amorphous ZrO₂-comprising material is deposited to a thickness nogreater than 35 Angstroms outward of the second Al₂O₃-comprisingmaterial. The amorphous ZrO₂-comprising material is annealed after itsdeposition to form crystalline ZrO₂-comprising material having athickness of no greater than 35 Angstroms. Example anneal conditionsinclude those described above. The ZrO₂-comprising material may or maynot be in direct physical touching contact with the secondAl₂O₃-comprising material. In one embodiment, anAl_(x)Zr_(y)O_(z)-comprising material is provided between theZrO₂-comprising material and the second Al₂O₃-comprising material. Inone embodiment, the ZrO₂-comprising material and the secondAl₂O₃-comprising material are provided in direct physical touchingcontact with such Al_(x)Zr_(y)O_(z)-comprising material.

After the annealing of the amorphous ZrO₂-comprising material, an outerconductive metal capacitor electrode material is deposited outward ofthe crystalline ZrO₂-comprising material. Example materials include anyof those described above with respect to capacitor electrodes 12 and 14.

A combination of the above-stated processing steps for the capacitordielectric region in the further stated embodiments in the stated orderin combination with the stated thickness values produces the unexpectedresult of the capacitor dielectric region having in combination adielectric constant k of at least 35 and leakage current no greater than1×10⁻⁷ amps/cm² at from −1.1V to +1.1V. In one embodiment, the capacitordielectric region has a dielectric constant k of at least 40. In oneembodiment, the capacitor dielectric region has leakage current nogreater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V.

Another Al₂O₃-comprising material may be deposited outward of thecrystalline ZrO₂-comprising material prior to the depositing of theouter conductive metal capacitor electrode material, and to have athickness of from 2 Angstroms to 10 Angstroms. Such may or may not beformed in direct physical touching contact with the crystallineZrO₂-comprising material. In one embodiment, an Al_(x)Zr_(y)O_(z)-comprising material is provided between such another/outerAl₂O₃-comprising material and the crystalline ZrO₂-comprising material.In one embodiment, such another/outer Al₂O₃-comprising material and thecrystalline ZrO₂-comprising material are provided in direct physicaltouching contact with the Al_(x)Zr_(y)O_(z)-comprising material.

In additional further embodiments, processing may proceed as describedabove through the depositing of the second Al₂O₃-comprising materialoutward of the TiO₂-comprising material, and to have a thickness of from2 Angstroms to 16 Angstroms. Then, an amorphous ZrO₂-comprising materialis deposited to a thickness greater than 35 Angstroms outward of thesecond Al₂O₃-comprising material. In such event, the outer conductivemetal capacitor electrode material is then deposited outward of theZrO₂-comprising material at a temperature which transforms the amorphousZrO₂-comprising material to be crystalline during such act of depositingthe outer conductive metal capacitor electrode material. For example,exposure to a temperature of at least 500° C. for at least 1 minuteoccurring during deposition of the outer conductive metal capacitorelectrode material will achieve such amorphous-to-crystalline phasetransformation of a ZrO₂-comprising material having thickness greaterthan 35 Angstroms.

Alternately in such additional further embodiments, the outer conductivemetal capacitor electrode material is deposited outward of theZrO₂-comprising material at a temperature which does not transform theZrO₂-comprising material to be crystalline during such act of depositingthe outer conductive metal capacitor electrode material. Afterdeposition of the outer conductive metal capacitor electrode material,the substrate is then exposed to a temperature to transform theamorphous ZrO₂-comprising material having thickness greater than 35Angstroms to be crystalline. Example anneal conditions include exposureto a temperature of at least 500° C. for at least 1 minute.

A combination of the above-stated processing steps for the capacitordielectric region in the last stated embodiments in the stated order incombination with the stated thickness values produces the unexpectedresult of the capacitor dielectric region having in combination adielectric constant k of at least 35 and leakage current no greater than1×10⁻⁷ amps/cm² at from −1.1V to +1.1V. In one embodiment, the capacitordielectric region has a dielectric constant k of at least 40. In oneembodiment, the capacitor dielectric region has leakage current nogreater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V..

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A method of forming a capacitor, comprising: depositing innerconductive metal capacitor electrode material over a substrate; forminga capacitor dielectric region outward of the inner conductive metalcapacitor electrode material to a thickness no greater than 150Angstroms, a dielectric constant k of at least 35, and leakage currentno greater than 1×10⁻⁷ amps/cm² at from −1.1V to +1.1V; the forming ofthe capacitor dielectric region comprising: depositing an amorphousZrO₂-comprising material to a thickness of from 30 Angstroms to 70Angstroms outward of the inner conductive metal capacitor electrodematerial; annealing the amorphous ZrO₂-comprising material havingthickness of from 30 Angstroms to 70 Angstroms after its deposition toform crystalline ZrO₂-comprising material having a thickness of from 30Angstroms to 70 Angstroms; after the annealing of the amorphousZrO₂-comprising material, depositing an Al₂O₃-comprising materialoutward of the crystalline ZrO₂-comprising material, theAl₂O₃-comprising material having a thickness of from 2 Angstroms to 16Angstroms; depositing an amorphous TiO₂-comprising material to athickness no greater than 50 Angstroms outward of the Al₂O₃-comprisingmaterial; and annealing the amorphous TiO₂-comprising material havingthickness no greater than 50 Angstroms in the presence of oxygen afterits deposition to form crystalline TiO₂-comprising material; and afterthe annealing of the amorphous TiO₂-comprising material, depositingouter conductive metal capacitor electrode material outward of thecrystalline TiO₂-comprising material.
 2. The method of claim 1comprising depositing an intervening Al₂O₃-comprising material outwardof the inner conductive metal capacitor electrode material prior to thedepositing of the amorphous ZrO₂-comprising material, the interveningAl₂O₃-comprising material having a thickness of from 2 Angstroms to 10Angstroms, a sum of the thicknesses of the intervening Al₂O₃-comprisingmaterial, the crystalline ZrO₂-comprising material, and theAl₂O₃-comprising material deposited over the crystalline ZrO₂-comprisingmaterial totals no more than 70 Angstroms.
 3. The method of claim 2wherein the intervening Al₂O₃-comprising material has a thickness offrom 2 Angstroms to 4 Angstroms.
 4. The method of claim 2 wherein theintervening Al₂O₃-comprising material is in direct physical touchingcontact with the crystalline ZrO₂-comprising material.
 5. The method ofclaim 2 comprising providing an Al_(x)Zr_(y)O_(z)-comprising materialbetween the intervening Al₂O₃-comprising material and the crystallineZrO₂-comprising material, the intervening Al₂O₃-comprising material andthe ZrO₂-comprising material being in direct physical touching contactwith the Al_(x)Zr_(y)O_(z)-comprising material.
 6. The method of claim 1wherein the annealing of the amorphous ZrO₂-comprising material isconducted in an inert atmosphere.
 7. The method of claim 1 comprisingforming the capacitor dielectric region to a thickness no greater than100 Angstroms.
 8. The method of claim 1 comprising forming theAl₂O₃-comprising material in direct physical touching contact with thecrystalline ZrO₂-comprising material.
 9. The method of claim 1comprising providing an Al_(x)Zr_(y)O_(z)-comprising material betweenthe Al₂O₃-comprising material and the crystalline ZrO₂-comprisingmaterial, the Al₂O₃-comprising material and the ZrO₂-comprising materialbeing in direct physical touching contact with theAl_(x)Zr_(y)O_(z)-comprising material.
 10. The method of claim 1comprising forming the crystalline TiO₂-comprising material in directphysical touching contact with the Al₂O₃-comprising material.
 11. Themethod of claim 1 comprising providing a Ti_(x)Al_(y)O_(z)-comprisingmaterial between the Al₂O₃-comprising material and the crystallineTiO₂-comprising material, the Al₂O₃-comprising material and thecrystalline TiO₂-comprising material being in direct physical touchingcontact with the Ti_(x)Al_(y)O_(z)-comprising material.
 12. The methodof claim 1 comprising depositing another Al₂O₃-comprising materialoutward of the crystalline TiO₂-comprising material prior to thedepositing of the outer conductive metal capacitor electrode material,the another Al₂O₃-comprising material being deposited to a thickness offrom 2 Angstroms to 10 Angstroms.
 13. The method of claim 12 comprisingforming the another Al₂O₃-comprising material in direct physicaltouching contact with the crystalline TiO₂-comprising material.
 14. Themethod of claim 12 comprising providing a Ti_(x)Al_(y)O_(z)-comprisingmaterial between the another Al₂O₃-comprising material and thecrystalline TiO₂-comprising material, the another Al₂O₃-comprisingmaterial and the crystalline TiO₂-comprising material being in directphysical touching contact with the Ti_(x)Al_(y)O_(z)-comprisingmaterial.
 15. The method of claim 12 comprising depositing anintervening Al₂O₃-comprising material outward of the inner conductivemetal capacitor electrode material prior to the depositing of theamorphous ZrO₂-comprising material, the intervening Al₂O₃-comprisingmaterial having a thickness of from 2 Angstroms to 10 Angstroms, a sumof the thicknesses of the intervening Al₂O₃-comprising material, thecrystalline ZrO₂-comprising material, and the Al₂O₃-comprising materialdeposited over the crystalline ZrO₂-comprising material totals no morethan 70 Angstroms.
 16. A method of forming a capacitor, comprising:depositing inner conductive metal capacitor electrode material over asubstrate; forming a capacitor dielectric region outward of the innerconductive metal capacitor electrode material to a thickness no greaterthan 150 Angstroms, a dielectric constant k of at least 35, and leakagecurrent no greater than 1×10⁻⁷ amps/cm² at from −1.1V to +1.1V; theforming of the capacitor dielectric region comprising: depositing anamorphous ZrO₂-comprising material to a thickness of from 30 Angstromsto 70 Angstroms outward of the inner conductive metal capacitorelectrode material; annealing the amorphous ZrO₂-comprising havingthickness of from 30 Angstroms to 70 Angstroms after its deposition toform crystalline ZrO₂-comprising material having a thickness of from 30Angstroms to 70 Angstroms; after the annealing of the amorphousZrO₂-comprising material, depositing an Al₂O₃-comprising materialoutward of the crystalline ZrO₂-comprising material, theAl₂O₃-comprising material having a thickness of from 2 Angstroms to 16Angstroms; and depositing an amorphous TiO₂-comprising material to athickness greater than 50 Angstroms outward of the Al₂O₃-comprisingmaterial; and depositing outer conductive metal capacitor electrodematerial outward of the TiO₂-comprising material at a temperature whichtransforms the amorphous TiO₂-comprising material to be crystallineduring said depositing of outer conductive metal capacitor electrodematerial.
 17. The method of claim 16 comprising depositing anintervening Al₂O₃-comprising material outward of the inner conductivemetal capacitor electrode material prior to the depositing of theamorphous ZrO₂-comprising material, the intervening Al₂O₃-comprisingmaterial having a thickness of from 2 Angstroms to 10 Angstroms, a sumof the thicknesses of the intervening Al₂O₃-comprising material, thecrystalline ZrO₂-comprising material, and the Al₂O₃-comprising materialdeposited over the crystalline ZrO₂-comprising material totals no morethan 70 Angstroms.
 18. The method of claim 16 comprising depositinganother Al₂O₃-comprising material outward of the amorphousTiO₂-comprising material prior to the depositing of the outer conductivemetal capacitor electrode material, the another Al₂O₃-comprisingmaterial being deposited to a thickness of from 2 Angstroms to 10Angstroms.
 19. The method of claim 18 comprising depositing anintervening Al₂O₃-comprising material outward of the inner conductivemetal capacitor electrode material prior to the depositing of theamorphous ZrO₂-comprising material, the intervening Al₂O₃-comprisingmaterial having a thickness of from 2 Angstroms to 10 Angstroms, a sumof the thicknesses of the intervening Al₂O₃-comprising material, thecrystalline ZrO₂-comprising material, and the Al₂O₃-comprising materialdeposited over the crystalline ZrO₂-comprising material totals no morethan 70 Angstroms.
 20. A method of forming a capacitor, comprising:depositing inner conductive metal capacitor electrode material over asubstrate; forming a capacitor dielectric region outward of the innerconductive metal capacitor electrode material to a thickness no greaterthan 150 Angstroms, a dielectric constant k of at least 35, and leakagecurrent no greater than 1×10⁻⁷ amps/cm² at from −1.1V to +1.1V; theforming of the capacitor dielectric region comprising: depositing anamorphous ZrO₂-comprising material to a thickness of from 30 Angstromsto 70 Angstroms outward of the inner conductive metal capacitorelectrode material; annealing the amorphous ZrO₂-comprising havingthickness of from 30 Angstroms to 70 Angstroms after its deposition toform crystalline ZrO₂-comprising material having a thickness of from 30Angstroms to 70 Angstroms; after the annealing of the amorphousZrO₂-comprising material, depositing an Al₂O₃-comprising materialoutward of the crystalline ZrO₂-comprising material, theAl₂O₃-comprising material having a thickness of from 2 Angstroms to 16Angstroms; and depositing an amorphous TiO₂-comprising material to athickness greater than 50 Angstroms outward of the Al₂O₃-comprisingmaterial; and depositing outer conductive metal capacitor electrodematerial outward of the TiO₂-comprising material at a temperature whichdoes not transform the TiO₂-comprising material to be crystalline duringsaid depositing of outer conductive metal capacitor electrode material;and after the depositing of the outer conductive metal capacitorelectrode material, annealing the substrate having the amorphousTiO₂-comprising material having thickness no greater than 50 Angstromsto form crystalline TiO₂-comprising material.
 21. A method of forming acapacitor, comprising: depositing inner conductive metal capacitorelectrode material over a substrate; forming a capacitor dielectricregion outward of the inner conductive metal capacitor electrodematerial to a thickness no greater than 150 Angstroms, a dielectricconstant k of at least 35, and leakage current no greater than 1×10⁻⁷amps/cm² at from -1.1V to +1.1V; the forming of the capacitor dielectricregion comprising: depositing a first Al₂O₃-comprising material outwardof the inner conductive metal capacitor electrode material, the firstAl₂O₃-comprising material having a thickness of from 2 Angstroms to 10Angstroms; depositing a TiO₂-comprising material outward of the firstAl₂O₃-comprising material, the TiO₂-comprising material having athickness of from 40 Angstroms to 80 Angstroms; depositing a secondAl₂O₃-comprising material outward of the TiO₂-comprising material, thesecond Al₂O₃-comprising material having a thickness of from 2 Angstromsto 10 Angstroms; depositing an amorphous ZrO₂-comprising material to athickness of from 30 Angstroms to 70 Angstroms outward of the secondAl₂O₃-comprising material; and annealing the amorphous ZrO₂-comprisingmaterial having thickness no greater than 35 Angstroms after itsdeposition to form crystalline ZrO₂-comprising material; and after theannealing of the amorphous ZrO₂-comprising material, depositing outerconductive metal capacitor electrode material outward of the crystallineZrO₂-comprising material.
 22. The method of claim 21 comprisingdepositing another Al₂O₃-comprising material outward of the crystallineZrO₂-comprising material prior to the depositing of the outer conductivemetal capacitor electrode material, the another Al₂O₃-comprisingmaterial being deposited to a thickness of from 2 Angstroms to 10Angstroms.
 23. A method of forming a capacitor, comprising: depositinginner conductive metal capacitor electrode material over a substrate;forming a capacitor dielectric region outward of the inner conductivemetal capacitor electrode material to a thickness no greater than 150Angstroms, a dielectric constant k of at least 40, and leakage currentno greater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V; the forming ofthe capacitor dielectric region comprising: depositing a firstAl₂O₃-comprising material outward of the inner conductive metalcapacitor electrode material, the first Al₂O₃-comprising material havinga thickness of from 2 Angstroms to 10 Angstroms; depositing aTiO₂-comprising material outward of the first Al₂O₃-comprising material,the TiO₂-comprising material having a thickness of from 40 Angstroms to80 Angstroms; depositing a second Al₂O₃-comprising material outward ofthe TiO₂-comprising material, the second Al₂O₃-comprising materialhaving a thickness of from 2 Angstroms to 10 Angstroms; and depositingan amorphous ZrO₂-comprising material to a thickness greater than 35Angstroms outward of the second Al₂O₃-comprising material; anddepositing outer conductive metal capacitor electrode material outwardof the amorphous ZrO₂-comprising material at a temperature whichtransforms the amorphous ZrO₂-comprising material to be crystallineduring said depositing of outer conductive metal capacitor electrodematerial.
 24. The method of claim 23 comprising depositing anotherAl₂O₃-comprising material outward of the amorphous ZrO₂-comprisingmaterial prior to the depositing of the outer conductive metal capacitorelectrode material, the another Al₂O₃-comprising material beingdeposited to a thickness of from 2 Angstroms to 10 Angstroms.
 25. Amethod of forming a capacitor, comprising: depositing inner conductivemetal capacitor electrode material over a substrate; forming a capacitordielectric region outward of the inner conductive metal capacitorelectrode material to a thickness no greater than 150 Angstroms, adielectric constant k of at least 40, and leakage current no greaterthan 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V; the forming of thecapacitor dielectric region comprising: depositing a firstAl₂O₃-comprising material outward of the inner conductive metalcapacitor electrode material, the first Al₂O₃-comprising material havinga thickness of from 2 Angstroms to 10 Angstroms; depositing aTiO₂-comprising material outward of the first Al₂O₃-comprising material,the TiO₂-comprising material having a thickness of from 40 Angstroms to80 Angstroms; depositing a second Al₂O₃-comprising material outward ofthe TiO₂-comprising material, the second Al₂O₃-comprising materialhaving a thickness of from 2 Angstroms to 10 Angstroms; and depositingan amorphous ZrO₂-comprising material to a thickness greater than 35Angstroms outward of the second Al₂O₃-comprising material; anddepositing outer conductive metal capacitor electrode material outwardof the amorphous ZrO₂-comprising material at a temperature which doesnot transform the amorphous ZrO₂-comprising material to be crystallineduring said depositing of outer conductive metal capacitor electrodematerial; and after the depositing of the outer conductive metalcapacitor electrode material, annealing the substrate having theamorphous ZrO₂-comprising material having thickness no greater than 35Angstroms to form crystalline ZrO₂-comprising material.
 26. A method offorming a capacitor, comprising: depositing inner conductive metalcapacitor electrode material over a substrate; forming a capacitordielectric region outward of the inner conductive metal capacitorelectrode material to a thickness no greater than 150 Angstroms, adielectric constant k of at least 40, and leakage current no greaterthan 5×10⁻⁸ amps/cm² at from -1.1V to +1.1V, the forming of thecapacitor dielectric region comprising: depositing an amorphousZrO₂-comprising material to a thickness no greater than 35 Angstromsoutward of the inner conductive metal capacitor electrode material;annealing the amorphous ZrO₂-comprising material having thickness nogreater than 35 Angstroms after its deposition to form crystallineZrO₂-comprising material having a thickness no greater than 35Angstroms; after the annealing of the amorphous ZrO₂-comprisingmaterial, depositing an Al₂O₃-comprising material outward of thecrystalline ZrO₂-comprising material, the Al₂O₃-comprising materialhaving a thickness of from 2 Angstroms to 16 Angstroms; depositing anamorphous TiO₂-comprising material to a thickness no greater than 50Angstroms outward of the Al₂O₃-comprising material; and annealing theamorphous TiO₂-comprising material having thickness no greater than 50Angstroms in the presence of oxygen after its deposition to formcrystalline TiO₂-comprising material; and after the annealing of theamorphous TiO₂-comprising material, depositing outer conductive metalcapacitor electrode material outward of the crystalline TiO₂-comprisingmaterial.
 27. A method of forming a capacitor, comprising: depositinginner conductive metal capacitor electrode material over a substrate;forming a capacitor dielectric region outward of the inner conductivemetal capacitor electrode material to a thickness no greater than 150Angstroms, a dielectric constant k of at least 40, and leakage currentno greater than 5×10⁻⁸ amps/cm² at from −1.1V to +1.1V; the forming ofthe capacitor dielectric region comprising: depositing an amorphousZrO₂-comprising material to a thickness no greater than 35 Angstromsoutward of the inner conductive metal capacitor electrode material;annealing the amorphous ZrO₂-comprising having thickness no greater than35 Angstroms after its deposition to form crystalline ZrO₂-comprisingmaterial having a thickness no greater than 35 Angstroms; after theannealing of the amorphous ZrO₂-comprising material, depositing anAl₂O₃-comprising material outward of the crystalline ZrO₂-comprisingmaterial, the Al₂O₃-comprising material having a thickness of from 2Angstroms to 16 Angstroms; and depositing an amorphous TiO₂-comprisingmaterial to a thickness greater than 50 Angstroms outward of theAl₂O₃-comprising material; and depositing outer conductive metalcapacitor electrode material outward of the TiO₂-comprising material ata temperature which transforms the amorphous TiO₂-comprising material tobe crystalline during said depositing of outer conductive metalcapacitor electrode material.
 28. A method of forming a capacitor,comprising: depositing inner conductive metal capacitor electrodematerial over a substrate; forming a capacitor dielectric region outwardof the inner conductive metal capacitor electrode material to athickness no greater than 150 Angstroms, a dielectric constant k of atleast 40, and leakage current no greater than 5×10⁻⁸ amps/cm² at from−1.1V to +1.1V; the forming of the capacitor dielectric regioncomprising: depositing an amorphous ZrO₂-comprising material to athickness no greater than 35 Angstroms outward of the inner conductivemetal capacitor electrode material; annealing the amorphousZrO₂-comprising having thickness no greater than 35 Angstroms after itsdeposition to form crystalline ZrO₂-comprising material having athickness no greater than 35 Angstroms; after the annealing of theamorphous ZrO₂-comprising material, depositing an Al₂O₃-comprisingmaterial outward of the crystalline ZrO₂-comprising material, theAl₂O₃-comprising material having a thickness of from 2 Angstroms to 16Angstroms; and depositing an amorphous TiO₂-comprising material to athickness greater than 50 Angstroms outward of the Al₂O₃-comprisingmaterial; and depositing outer conductive metal capacitor electrodematerial outward of the TiO₂-comprising material at a temperature whichdoes not transform the TiO₂-comprising material to be crystalline duringsaid depositing of outer conductive metal capacitor electrode material;and after the depositing of the outer conductive metal capacitorelectrode material, annealing the substrate having the amorphousTiO₂-comprising material having thickness no greater than 50 Angstromsto form crystalline TiO₂-comprising material.
 29. A method of forming acapacitor, comprising: depositing inner conductive metal capacitorelectrode material over a substrate; forming a capacitor dielectricregion outward of the inner conductive metal capacitor electrodematerial to a thickness no greater than 150 Angstroms, a dielectricconstant k of at least 35, and leakage current no greater than 1×10⁻⁷amps/cm² at from −1.1V to +1.1V; the forming of the capacitor dielectricregion comprising: depositing a first Al₂O₃-comprising material outwardof the inner conductive metal capacitor electrode material, the firstAl₂O₃-comprising material having a thickness of from 2 Angstroms to 10Angstroms; depositing a TiO₂-comprising material outward of the firstAl₂O₃-comprising material, the TiO₂-comprising material having athickness of from 40 Angstroms to 80 Angstroms; depositing a secondAl₂O₃-comprising material outward of the TiO₂-comprising material, thesecond Al₂O₃-comprising material having a thickness of from 2 Angstromsto 10 Angstroms; depositing an amorphous ZrO₂-comprising material to athickness no greater than 35 Angstroms outward of the secondAl₂O₃-comprising material; and annealing the amorphous ZrO₂-comprisingmaterial having thickness no greater than 35 Angstroms after itsdeposition to form crystalline ZrO₂-comprising material; and after theannealing of the amorphous ZrO₂-comprising material, depositing outerconductive metal capacitor electrode material outward of the crystallineZrO₂-comprising material.